absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave, 50 to 60 hz, gate open 600 v i t(rms) r.m.s on-state current t c = 107 c, full sine wave 4a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 40/44 a i 2 t i 2 t for fusing tp = 10ms 3.1 a 2 s p gm peak gate power dissipation t c = 107 c, pulse width ? 1.0 us 5w p g(av) average gate power dissipation over any 20ms period 0.5 w i gm peak gate current tp = 20us, t j =125c 2a v gm peak gate voltage tp = 20us, t j =125c 5v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c DBT136S-600 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 4 a ) high commutation dv/dt sensitive gate triggering 4 mode non-isolated type general description this device is sensitive gate tr iac suitable for direct coupling to ttl, htl, cmos and applic ation such as various logic functions, low power ac switching applications, such as fan speed, small light controllers and home appliance equipment. 1/5 triacs / sensitive gate 2.t2 3.gate 1.t1 symbol ? ? ? ? i t(rms) = 4 a i tsm = 40 a bv drm = 600v july, 2005. rev.0 copyright @ d&i semiconductor co., ltd., all rights reserved. 1 2 3 2 d-pak
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 0.5 ma v tm peak on-state voltage i t = 5 a, inst. measurement 1.4 1.7 v i + gt1 gate trigger current v d = 6 v, r l =10 ? 5 ma i - gt1 ? 5 i - gt3 ? 5 i + gt3 e 10 v + gt1 gate trigger voltage v d = 6 v, r l =10 ? 1.5 v v - gt1 ? 1.5 v - gt3 ? 1.5 v + gt3 e 2.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -0.75 a/ms, v d =2/3 v drm 5.0 v/ k i h holding current 5 ma r th(j-c) thermal impedance junction to case ( half cycle ) 3.0 c/w r th(j-a) thermal impedance junction to ambient (in the free air ) 60 c/w DBT136S-600 2/5
-50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 10 3 0 5 10 15 20 25 30 35 60hz 50hz surge on-state current [a] time (cycles) 012345 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 012345 0 1 2 3 4 5 6 7 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] 10 1 10 2 10 3 10 -1 10 0 10 1 25 ? p g(av) = 0.5w p gk = 5w i gm =2a v gk = 5v v gd = 0.2v gate voltage [v] gate current [ma] DBT136S-600 3/5 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature ? ? 2 t 360 t ? : conduction angle ? ? 2 t 360 t ? : conduction angle
4/5 DBT136S-600 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit -50 0 50 100 150 0.1 1 10 i + gt3 i + gt1 i - gt1 i - gt3 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 transient thermal impedance [ o c/w] time (sec) ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? test procedure test procedure ? test procedure ? ? a v 10 ? 6v r g ? ? test procedure e
dim. mm inch min. typ. max. min. typ. max. a 6.48 6.604 6.73 0.255 0.26 0.265 b 5.0 5.08 5.21 0.197 0.2 0.205 c 7.42 7.8 8.18 0.292 0.307 0.322 d 2.184 2.286 2.388 0.086 0.09 0.094 e 0.762 0.813 0.864 0.03 0.032 0.034 f 1.016 1.067 1.118 0.04 0.042 0.044 g 2.286 0.09 h 2.286 0.09 i 0.534 0.61 0.686 0.021 0.024 0.027 j 1.016 1.067 1.118 0.04 0.042 0.044 k 0.508 0.02 l 0.762 0.03 1.57 0.06 5/5 DBT136S-600 to-252(d-pak) package dimension a b c d e g f 3 2 1 h i j k l 1. t1 2. t2 3. gate
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